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CM1216
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V P
I P
Operating Supply Voltage
(V P ? V N )
Operating Supply Current
(V P ? V N ) = 3.3 V
3.3
5.5
8
V
m A
V F
I LEAK
C IN
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
I F = 20 m A; T A = 25 ° C
T A = 25 ° C; V P = 5 V, V N = 0 V
At 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V
(Note 2)
0.6
0.6
0.8
0.8
± 0.1
1.6
0.95
0.95
± 1.0
2.0
V
m A
pF
D C IN
Channel Input Capacitance Matching
0.04
pF
C MUTUAL
V ESD
V CL
R DYN
Mutual Capacitance
ESD Protection
Peak Discharge Voltage at any
channel input, in system,
contact discharge per
IEC 61000 ? 4 ? 2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive transients
Negative transients
(V P ? V N ) = 3.3 V
T A = 25 ° C
(Notes 2 and 3)
I PP = 1 A, t P = 8/20 m S; T A = 25 ° C
I PP = 1 A, t P = 8/20 m S; T A = 25 ° C
± 15
0.13
+9.0
? 1.5
0.6
0.4
pF
kV
V
W
1. All parameters specified at T A = ? 40 ° C to +85 ° C unless otherwise noted.
2. Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V P = 3.3 V, V N grounded.
3. From I/O pins to V P or V N only. V P bypassed to V N with low ESR 0.2 m F ceramic capacitor.
PERFORMANCE CHARACTERISTICS
Figure 1. Typical Variation of C IN vs. V IN
(f = 1 MHz, V P = 3.3 V, V N = 0 V, 0.1 m F Chip Capacitor between V P and V N , T A = 25 5 C)
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